Control of interface shape by non-axisymmetric solution convection in top-seeded solution growth of SiC crystal

Daiki Koike, Tomonori Umezaki, Kenta Murayama, Kenta Aoyagi, Shunta Harada, Miho Tagawa, Takenobu Sakai, Toru Ujihara

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We achieved the convex growth interface shape in top-seeded solution growth of SiC applying non-axisymmetric solution convection induced by non-axisymmetric temperature distribution. The detailed solution flow, temperature distribution and carbon concentration distribution were calculated by 3-dimensional numerical analysis. In the present case, the solution flow below the crystal was unidirectional and the supersaturation was increased along the solution flow direction. By the rotation of the crystal in the unidirectional flow and the temperature distribution, we successfully obtained the crystal with the convex growth interface shape.

本文言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2014
編集者Didier Chaussende, Gabriel Ferro
出版社Trans Tech Publications Ltd
ページ18-21
ページ数4
ISBN(印刷版)9783038354789
DOI
出版ステータスPublished - 2015
外部発表はい
イベントEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
継続期間: 2014 9 212014 9 25

出版物シリーズ

名前Materials Science Forum
821-823
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
CountryFrance
CityGrenoble
Period14/9/2114/9/25

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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