Control of flat band voltage by partial incorporation of La 2O3 or Sc2O3 into HfO2 in metal/HfO2/SiO2/Si MOS capacitors

M. Adachi, K. Okamoto, K. Kakushima, P. Ahmet, K. Tsutsui, N. Sugii, T. Hattori, H. Iwai

研究成果: Conference contribution

抄録

High-k/SiO2 interfacial properties are most critical factors determining the high-k gate MOSFET characteristics. We fabricated MOS capacitors of metal/HfO2/SiO2/Si structures in which were contained in the HfO2 layer. Flat-band voltage (VFB) shifts were measured by changing composition in metal/HfO2/(HfO2) 1-x(La2O3)x/SiO2/Si and metal/HfO2/(HfO2)1-x. (Sc2O 3)x/SiO2/Si structures. It was found that VFB shift arises mainly from high-k/SiO2 interface rather than metal/high-k interface. VFB could be effectively controlled by incorporating La2O3 or Sc2O3 near the high-k/SiO2 interface.

本文言語English
ホスト出版物のタイトルECS Transactions - 5th International Symposium on High Dielectric Constant Materials and Gate Stacks
ページ157-167
ページ数11
4
DOI
出版ステータスPublished - 2007
外部発表はい
イベント5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting - Washington, DC, United States
継続期間: 2007 10 82007 10 10

出版物シリーズ

名前ECS Transactions
番号4
11
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period07/10/807/10/10

ASJC Scopus subject areas

  • Engineering(all)

フィンガープリント 「Control of flat band voltage by partial incorporation of La <sub>2</sub>O<sub>3</sub> or Sc<sub>2</sub>O<sub>3</sub> into HfO<sub>2</sub> in metal/HfO<sub>2</sub>/SiO<sub>2</sub>/Si MOS capacitors」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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