Control of ferromagnetism in field-effect transistor of a magnetic semiconductor

F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, H. Ohno

研究成果: Conference article査読

32 被引用数 (Scopus)

抄録

The structure of a field effect transistor (FET) was used for isothermal and reversible electric-field control of the ferromagnetism of (In,Mn)As magnetic semiconductors. The ferromagnetic transition temperature was controlled isothermally and reversibly by varying the gate electric field. The field-controlled ferromagnetism was expected to be used in the integration of ferromagnetic devices with nonmagnetic devices such as lasers and transistors in use in electronics.

本文言語English
ページ(範囲)351-355
ページ数5
ジャーナルPhysica E: Low-Dimensional Systems and Nanostructures
12
1-4
DOI
出版ステータスPublished - 2002 1 1
イベント14th International Conference on the - Prague, Czech Republic
継続期間: 2001 7 302001 8 3

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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