Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications

Hirokazu Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H. C. Kang, H. Karasawa, Tetsuya Suemitsu, Taiichi Otsuji, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita, Maki Suemitsu

研究成果: Article

31 引用 (Scopus)

抜粋

Graphene is a promising material in next-generation devices. Large-scale epitaxial graphene should be grown on Si substrates to transfer the accumulated technologies to integrated devices. We have for this reason developed epitaxy of graphene on Si (GOS) and device operation of the backgate field-effect transistors (FETs) using GOS has been confirmed. It is demonstrated in this paper that the GOS method enables us to tune the structural and electronic properties of graphene in terms of the crystallographic orientation of the Si substrate. Furthermore, it is shown that the uniformity of the GOS process within a sizable area enables us to reliably fabricate topgate FETs using conventional lithography techniques. GOS can be thus the key material in next-generation devices owing to the tunability of the electronic structure by the crystallographic orientation of the Si substrate.

元の言語English
ページ(範囲)17242-17248
ページ数7
ジャーナルJournal of Materials Chemistry
21
発行部数43
DOI
出版物ステータスPublished - 2011 11 21

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

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    Fukidome, H., Takahashi, R., Abe, S., Imaizumi, K., Handa, H., Kang, H. C., Karasawa, H., Suemitsu, T., Otsuji, T., Enta, Y., Yoshigoe, A., Teraoka, Y., Kotsugi, M., Ohkouchi, T., Kinoshita, T., & Suemitsu, M. (2011). Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications. Journal of Materials Chemistry, 21(43), 17242-17248. https://doi.org/10.1039/c1jm12921j