Continuous-wave operation of ZnSe-based laser diodes homoepitaxially grown on semi-insulating ZnSe substrates

A. Ohki, T. Ohno, T. Matsuoka, Y. Ichimura

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Room temperature continuous-wave (CW) operation of a ZnSe-based blue-green laser diode, homo-epitaxially grown on semiinsulating ZnSe substrates, has been achieved. The threshold current and operation voltage under a CW electrical bias were 84mA and 15V, respectively. Under a pulsed electrical bias, lasing was achieved at up to 348 K. The characteristic temperature (T0) was 140K between 253 and 318K.

本文言語English
ページ(範囲)990-991
ページ数2
ジャーナルElectronics Letters
33
11
DOI
出版ステータスPublished - 1997 5 22
外部発表はい

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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