Continuous hydrothermal synthesis of nickel oxide nanoplates and their use as nanoinks for p-type channel material in a bottom-gate field-effect transistor

Seiichi Takami, Ryoma Hayakawa, Yutaka Wakayama, Toyohiro Chikyow

研究成果: Article査読

35 被引用数 (Scopus)

抄録

Nickel oxide nanoplates were continuously synthesized by hydrothermal reaction using a flow-type reactor. The products had a thickness of ∼ 10nm and a lateral size of 100-500nm. The nanoplates were purified and drop-cast on a bottom-gate substrate and used as the channel material in a field-effect transistor after annealing at 300 °C. The Id-Vd profile showed that the NiO nanoplates worked as the p-type semiconductor. This result suggests that various electronic devices can be prepared using metal oxide nanomaterials, which exhibit various properties including magnetism, ferroelectronics and catalysis as well as stability and safety in air and water.

本文言語English
論文番号134009
ジャーナルNanotechnology
21
13
DOI
出版ステータスPublished - 2010 3月 19

ASJC Scopus subject areas

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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