Contact resistance instability in pentacene thin film transistors induced by ambient gases

S. D. Wang, T. Minari, T. Miyadera, K. Tsukagoshi, J. X. Tang

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Top-contact pentacene thin film transistors show the strong susceptibility of the contact resistance to ambient gases. Moisture and oxygen lead to the increase and decrease in the contact resistance, respectively. The phenomenon is interpreted by the local conductivity change in the contact region induced by the adsorption/desorption of ambient gases. The present works suggest that the current injection in the pentacene thin film transistors is strongly correlated with the charge transport property in the contact region, where the contact resistance is mainly controlled by the charge trap states.

本文言語English
論文番号083309
ジャーナルApplied Physics Letters
94
8
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

フィンガープリント

「Contact resistance instability in pentacene thin film transistors induced by ambient gases」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル