TY - JOUR
T1 - Constitutional supercooling in heavily As-doped Czochralski Si crystal growth
AU - Taishi, Toshinori
AU - Ohno, Yutaka
AU - Yonenaga, Ichiro
N1 - Funding Information:
The authors thank Mr. M. Ohwa, Dr. K. Kashima and Mr. S. Narimatsu of Covalent Materials Corporation, Mr. Y. Murakami of Tohoku University and Prof. K. Hoshikawa of Shinshu University for their kind support. This work was performed under the Inter-university Cooperative Research Program of the Institute for Materials Research, Tohoku University.
PY - 2014/5/1
Y1 - 2014/5/1
N2 - Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling.
AB - Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling.
KW - A1. Constitutional supercooling
KW - A1. Doping
KW - A1. Segregation
KW - A2. Czochralski method
KW - B1. Semiconducting silicon
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U2 - 10.1016/j.jcrysgro.2013.10.037
DO - 10.1016/j.jcrysgro.2013.10.037
M3 - Article
AN - SCOPUS:84898003750
VL - 393
SP - 42
EP - 44
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
ER -