Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Toshinori Taishi, Yutaka Ohno, Ichiro Yonenaga

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Heavily arsenic (As) doped Si crystals were grown by the Czochralski (CZ) method, and constitutional supercooling in As-doped CZ-Si crystal growth was investigated. When the As concentration in the crystal was high, cellular growth was induced and SiAs precipitates were then observed following the cellular structure. The As concentration increases in the cellular structure along the growth direction and around the precipitates it reaches approximately 4 at%, which corresponds to the maximum solid solubility of As in Si. According to the estimation of critical growth conditions for constitutional supercooling, it qualitatively obeys the theoretical equation of constitutional supercooling.

本文言語English
ページ(範囲)42-44
ページ数3
ジャーナルJournal of Crystal Growth
393
DOI
出版ステータスPublished - 2014 5 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

フィンガープリント

「Constitutional supercooling in heavily As-doped Czochralski Si crystal growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル