Computational evaluation of electrical conductivity on SiC and the influence of crystal defects

Hideyuki Tsuboi, Megumi Kabasawa, Seika Ouchi, Miki Sato, Riadh Sahnoun, Michihisa Koyama, Nozomu Hatakeyama, Akira Endou, Hiromitsu Takaba, Momoji Kubo, Carlos A. Del Carpio, Yasuo Kitou, Emi Makino, Norikazu Hosokawa, Jun Hasegawa, Shoichi Onda, Akira Miyamoto

研究成果: Conference contribution

2 引用 (Scopus)

抜粋

The main electronic characteristics of silicon carbide (SiC) are its wide energy gap, high thermal conductivity, and high break down electric field which make of it of one of the most appropriate materials for power electronic devices. Previously we reported on a new electrical conductivity evaluation method for nano-scale complex systems based on our original tight-binding quantum chemical molecular dynamics method. In this work, we report on the application of our methodology to various SiC polytypes. The electrical conductivity obtained for perfect crystal models of 3C-, 6H- and 4H-SiC, were equal to 10-20-10-25 S/cm. For the defect including model an extremely large electrical conductivity (of the order of 102 S/cm) was obtained. Consequently these results lead to the conclusion that the 3C-, 6H-, and 4H-SiC polytypes with perfect crystals have insulator properties while the electrical conductivity of the crystal with defect, increases significantly. This result infers that crystals containing defects easily undergo electric breakdown.

元の言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2007
編集者Akira Suzuki, Hajime Okumura, Kenji Fukuda, Shin-ichi Nishizawa, Tsunenobu Kimoto, Takashi Fuyuki
出版者Trans Tech Publications Ltd
ページ497-500
ページ数4
ISBN(印刷物)9780878493579
出版物ステータスPublished - 2009
イベント12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007 - Otsu, Japan
継続期間: 2007 10 142007 10 19

出版物シリーズ

名前Materials Science Forum
600-603
ISSN(印刷物)0255-5476
ISSN(電子版)1662-9752

Other

Other12th International Conference on Silicon Carbide and Related Materials, ICSCRM 2007
Japan
Otsu
期間07/10/1407/10/19

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Tsuboi, H., Kabasawa, M., Ouchi, S., Sato, M., Sahnoun, R., Koyama, M., Hatakeyama, N., Endou, A., Takaba, H., Kubo, M., Del Carpio, C. A., Kitou, Y., Makino, E., Hosokawa, N., Hasegawa, J., Onda, S., & Miyamoto, A. (2009). Computational evaluation of electrical conductivity on SiC and the influence of crystal defects. : A. Suzuki, H. Okumura, K. Fukuda, S. Nishizawa, T. Kimoto, & T. Fuyuki (版), Silicon Carbide and Related Materials 2007 (pp. 497-500). (Materials Science Forum; 巻数 600-603). Trans Tech Publications Ltd.