TY - GEN
T1 - Comprehensive study on chemical structures of compositional transition layer at SiO2/Si(100) interface
AU - Suwa, T.
AU - Teramoto, Akinobu
AU - Muro, T.
AU - Kinoshita, T.
AU - Sugawa, S.
AU - Hattori, Takeo
AU - Ohmi, T.
PY - 2013
Y1 - 2013
N2 - The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on both sides of the SiO2/Si(100) interface covered with more than one SiO2 monolayer, which is device grade, were measured with the probing depth of nearly 2 nm. The novel analytical procedure of these spectra is developed by considering that one SiO2 monolayer, two compositional transition layers (CTLs), and one Si monolayer on Si substrate surface are continuously connected with each other. It was found for the interface formed in dry O2 at 900 °C that two CTLs constitute the first and second CTLs. The first CTL formed at the interface consists mainly of Si1+, Si2+, and Si0 and the second CTL formed on the first CTL consists mainly of Si3+ and Si4+. Influences of oxidation temperature, annealing in forming gas on the chemical structures of transition layers formed on both sides of the interface are also discussed.
AB - The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on both sides of the SiO2/Si(100) interface covered with more than one SiO2 monolayer, which is device grade, were measured with the probing depth of nearly 2 nm. The novel analytical procedure of these spectra is developed by considering that one SiO2 monolayer, two compositional transition layers (CTLs), and one Si monolayer on Si substrate surface are continuously connected with each other. It was found for the interface formed in dry O2 at 900 °C that two CTLs constitute the first and second CTLs. The first CTL formed at the interface consists mainly of Si1+, Si2+, and Si0 and the second CTL formed on the first CTL consists mainly of Si3+ and Si4+. Influences of oxidation temperature, annealing in forming gas on the chemical structures of transition layers formed on both sides of the interface are also discussed.
UR - http://www.scopus.com/inward/record.url?scp=84885783670&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84885783670&partnerID=8YFLogxK
U2 - 10.1149/05004.0313ecst
DO - 10.1149/05004.0313ecst
M3 - Conference contribution
AN - SCOPUS:84885783670
SN - 9781607683520
T3 - ECS Transactions
SP - 313
EP - 318
BT - Dielectric Materials and Metals for Nanoelectronics and Photonics 10
PB - Electrochemical Society Inc.
T2 - Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
Y2 - 7 October 2012 through 12 October 2012
ER -