Comprehensive study on chemical structures of compositional transition layer at SiO2/Si(100) interface

T. Suwa, A. Teramoto, T. Muro, T. Kinoshita, S. Sugawa, Takeo Hattori, T. Ohmi

研究成果: Conference contribution

抄録

The angle-resolved Si 2p photoelectron spectra arising from the transition layers formed on both sides of the SiO2/Si(100) interface covered with more than one SiO2 monolayer, which is device grade, were measured with the probing depth of nearly 2 nm. The novel analytical procedure of these spectra is developed by considering that one SiO2 monolayer, two compositional transition layers (CTLs), and one Si monolayer on Si substrate surface are continuously connected with each other. It was found for the interface formed in dry O2 at 900 °C that two CTLs constitute the first and second CTLs. The first CTL formed at the interface consists mainly of Si1+, Si2+, and Si0 and the second CTL formed on the first CTL consists mainly of Si3+ and Si4+. Influences of oxidation temperature, annealing in forming gas on the chemical structures of transition layers formed on both sides of the interface are also discussed.

本文言語English
ホスト出版物のタイトルDielectric Materials and Metals for Nanoelectronics and Photonics 10
ページ313-318
ページ数6
4
DOI
出版ステータスPublished - 2012 12 1
イベントSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
継続期間: 2012 10 72012 10 12

出版物シリーズ

名前ECS Transactions
番号4
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

OtherSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
国/地域United States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • 工学(全般)

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