Composition dependence of thermoelectric properties of binary narrow-gap Ga67-xRu33+x compound

Y. Takagiwa, J. T. Okada, K. Kimura

研究成果: Article査読

20 被引用数 (Scopus)

抄録

The composition and carrier concentration variations of the thermoelectric properties of the binary narrow-gap compound Ga67-xRu33+x have been investigated. The measured samples were synthesized by a combination of arc-melting and spark plasma sintering (SPS), succeeded in crack-free samples. We report that the temperature dependences of the electrical resistivity and Seebeck coefficient of the Ga67-xRu33+x are strongly affected by nominal Ru concentration. The Seebeck coefficients showed large positive values from 170 to 350 μV K-1 at 373 K. Also, large power factors from 2.2 to 3.0 mW m-1 K-2 were obtained at 773 K. The dimensionless figures of merit ZT beneficially increased with increasing temperature and reached a maximum value of 0.50 at about 773 K.

本文言語English
ページ(範囲)364-369
ページ数6
ジャーナルJournal of Alloys and Compounds
507
2
DOI
出版ステータスPublished - 2010 10月 8
外部発表はい

ASJC Scopus subject areas

  • 材料力学
  • 機械工学
  • 金属および合金
  • 材料化学

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