Ultraprecision diamond-machined silicon wafers have been irradiated by a nanosecond pulsed Nd: YAG laser. The results indicate that at specific laser energy intensity levels, the machining-induced subsurface damage layer of silicon has been reconstructed to a perfect single crystalline structure identical to the bulk. Laser irradiation causes two effects to silicon: one is the rapid melting and epitaxial regrowth of the near-surface amorphous layer; the other is the activation and complete removal of the dislocations from the crystalline layer. It is the dislocation-free crystalline bulk region that serves as the seed layer to recrystallize the amorphous layer, enabling excellent crystalline perfection. These findings may offer practical alternatives to current chemo-mechanical processing methods for silicon wafers.
|出版ステータス||Published - 2007 12月 1|
|イベント||4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007 - Fukuoka, Japan|
継続期間: 2007 11月 7 → 2007 11月 9
|Other||4th International Conference on Leading Edge Manufacturing in 21st Century, LEM 2007|
|Period||07/11/7 → 07/11/9|
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