Comparison of thermal and plasma oxidations for HfO 2 /Si interface

S. Hayashi, K. Yamamoto, Y. Harada, R. Mitsuhashi, K. Eriguchi, M. Kubota, M. Niwa

研究成果: Article査読

14 被引用数 (Scopus)

抄録

The HfO 2 /Si interface stability has been investigated by using a rapid thermal annealing (RTA), an inductively coupled plasma (ICP) and a reactive sputtering, as a comparison of thermal and plasma oxidations of the Hf/Si interface. Reduction in both capacitance equivalent thickness (CET) and leakage current density (J g ) was difficult to be attained by the thermal oxidation since it accompanies the crystalline HfO 2 with SiO 2 -like interface. Advantage is found for the plasma oxidation technique to oxidize Hf metal at low temperatures remaining the HfO 2 in an amorphous phase with silicate interface. Reduction in both CET and J g was attained by the plasma oxidation and a Hf metal pre-deposition technique.

本文言語English
ページ(範囲)228-233
ページ数6
ジャーナルApplied Surface Science
216
1-4 SPEC.
DOI
出版ステータスPublished - 2003 6 30
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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