Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining

Yukari Ishikawa, Yong Zhao Yao, Yoshihiro Sugawara, Koji Sato, Yoshihiro Okamoto, Noritaka Hayashi, Benjamin Dierre, Kentaro Watanabe, Takashi Sekiguchi

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Crystal damage induced in hexagonal SiC by cutting was characterized by transmission electron microscopy and Raman scattering. Wiresawing with loose abrasive (WSLA) induces stacking faults (SFs), dispersive triangular crystal disordered areas, and dislocation half-loop bundles. Wiresawing with fixed abrasive (WSFA) induces SFs, crystal disordered layers, and dislocation half-loop bundles. Electric discharge machining (EDM) predominantly forms silicon, carbon, and 3C-SiC by 6H-SiC decomposition. The mechanisms inducing crystal damage by slicing were discussed on the basis of characterization results.

本文言語English
論文番号071301
ジャーナルJapanese journal of applied physics
53
7
DOI
出版ステータスPublished - 2014 1 1
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント 「Comparison of slicing-induced damage in hexagonal SiC by wire sawing with loose abrasive, wire sawing with fixed abrasive, and electric discharge machining」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル