Comparison of leakage behaviors in p - And n -type metal-oxide- semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current

Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada

研究成果: Article査読

4 被引用数 (Scopus)

抄録

The gate leakage behaviors of p - and n -type metal-oxide-semiconductor (p-nMOS) capacitors with hafnium silicon oxynitride (HfSiON) gate dielectric were microscopically investigated by electron-beam-induced current (EBIC) technique. Carrier separated EBIC measurement has found that in nonstressed samples, hole conduction in pMOS is significantly enhanced by trap-assisted tunneling, while electron conduction in nMOS is independent of traps. After voltage stress, traps are induced in nMOS and enhanced electron conduction.

本文言語English
論文番号262103
ジャーナルApplied Physics Letters
92
26
DOI
出版ステータスPublished - 2008 7 11
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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