抄録
We have investigated comparative experiments for spin injection into semiconductor in an ordered L10-FePt/MgO/n-GaAs hybrid structure using electrical and optical detection methods. Spatial-resolved Kerr rotation microscope image clearly demonstrates accumulation of perpendicularly oriented spins in an n-GaAs channel at zero magnetic field. On the other hand, electrical three-terminal Hanle measurement shows shorter spin lifetime than that of the optical measurement. It suggests that the spin lifetime obtained from three-terminal Hanle method originates from spins at the MgO/GaAs interface but not in the bulk GaAs channel.
本文言語 | English |
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論文番号 | 164003 |
ジャーナル | Journal of Physics D: Applied Physics |
巻 | 48 |
号 | 16 |
DOI | |
出版ステータス | Published - 2015 4月 29 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学
- 音響学および超音波学
- 表面、皮膜および薄膜