Comparison of electrical and optical detection of spin injection in L10-FePt/MgO/GaAs hybrid structures

R. Ohsugi, J. Shiogai, Y. Kunihashi, M. Kohda, H. Sanada, T. Seki, M. Mizuguchi, H. Gotoh, K. Takanashi, J. Nitta

研究成果: Article査読

3 被引用数 (Scopus)

抄録

We have investigated comparative experiments for spin injection into semiconductor in an ordered L10-FePt/MgO/n-GaAs hybrid structure using electrical and optical detection methods. Spatial-resolved Kerr rotation microscope image clearly demonstrates accumulation of perpendicularly oriented spins in an n-GaAs channel at zero magnetic field. On the other hand, electrical three-terminal Hanle measurement shows shorter spin lifetime than that of the optical measurement. It suggests that the spin lifetime obtained from three-terminal Hanle method originates from spins at the MgO/GaAs interface but not in the bulk GaAs channel.

本文言語English
論文番号164003
ジャーナルJournal of Physics D: Applied Physics
48
16
DOI
出版ステータスPublished - 2015 4 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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