Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs

Sung Jun Jang, Dae Hyun Ka, Chong Gun Yu, Kwan Su Kim, Won Ju Cho, Jong Tae Park

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Negative bias temperature instability of SOI pMOSFET is investigated as a function of Si film orientation and film thickness. It is observed that NBTI induced threshold voltage shift is bigger for (1 1 0) MOSFETs in comparison to (1 0 0) MOSFETs and it decreases with the decrease of Si film thickness. The possible reason for less degradation of thinner Si film devices is explained by the small gate current due to low oxide field. The activation energy is independent on Si film orientation. The dependence of recovery behavior on the Si film orientation is studied by comparing of a conventional stress-measurement-stress technique with un-interrupted stress technique. It is also observed that the NBTI effect is underestimated and the recovery phenomenon is more profound in (1 1 0) MOSFETs.

本文言語English
ページ(範囲)1411-1415
ページ数5
ジャーナルMicroelectronics Reliability
47
9-11 SPEC. ISS.
DOI
出版ステータスPublished - 2007 8
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 安全性、リスク、信頼性、品質管理
  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

フィンガープリント

「Comparative study of NBTI as a function of Si film orientation and thickness in SOI pMOSFETs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル