Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh K. Pokharel; G. Zhang; S. Amalina; Kousuke Hikichi; Shuji Tanaka; Ken Ya Hashimoto; Shinji Taniguchi

doi:10.1109/IMaRC.2015.7411452

Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications

Ramesh K. Pokharel, G. Zhang, S. Amalina, Kousuke Hikichi, Shuji Tanaka, Ken Ya Hashimoto, Shinji Taniguchi

工学研究科・ロボティクス専攻

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.

本文言語	English
ホスト出版物のタイトル	IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	316-319
ページ数	4
ISBN（電子版）	9781509001569
DOI	https://doi.org/10.1109/IMaRC.2015.7411452
出版ステータス	Published - 2016 2月 17
イベント	IEEE MTT-S International Microwave and RF Conference, IMaRC 2015 - Hyderabad, India 継続期間: 2015 12月 10 → 2015 12月 12

出版物シリーズ

名前	IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015

Other

Other	IEEE MTT-S International Microwave and RF Conference, IMaRC 2015
国/地域	India
City	Hyderabad
Period	15/12/10 → 15/12/12

ASJC Scopus subject areas

コンピュータネットワークおよび通信

文献へのアクセス

10.1109/IMaRC.2015.7411452

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引用スタイル

Pokharel, R. K., Zhang, G., Amalina, S., Hikichi, K., Tanaka, S., Hashimoto, K. Y., & Taniguchi, S. (2016). Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. In IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015 (pp. 316-319). [7411452] (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMaRC.2015.7411452

Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. / Pokharel, Ramesh K.; Zhang, G.; Amalina, S. その他.

IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. p. 316-319 7411452 (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015).

研究成果: Conference contribution

Pokharel, RK, Zhang, G, Amalina, S, Hikichi, K, Tanaka, S, Hashimoto, KY & Taniguchi, S 2016, Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. in IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015., 7411452, IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015, Institute of Electrical and Electronics Engineers Inc., pp. 316-319, IEEE MTT-S International Microwave and RF Conference, IMaRC 2015, Hyderabad, India, 15/12/10. https://doi.org/10.1109/IMaRC.2015.7411452

Pokharel RK, Zhang G, Amalina S, Hikichi K, Tanaka S, Hashimoto KY その他. Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. In IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc. 2016. p. 316-319. 7411452. (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015). doi: 10.1109/IMaRC.2015.7411452

Pokharel, Ramesh K. ; Zhang, G. ; Amalina, S. その他. / Comparative design of extremely low phase noise oscillator in Class-B and Class-C by integrating film bulk acoustic resonator (FBAR) on CMOS wafer for low power applications. IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 316-319 (IEEE MTT-S International Microwave and RF Conference 2015, IMaRC 2015).

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abstract = "This paper presents the comparative design of a CMOS cross-coupled oscillator in class-B and Class-C topology, respectively using film bulk acoustic resonator (FBAR) in order to improve the phase noise and power consumption. The design issues such as low frequency stability, phase noise issues and optimization method of FBAR on a CMOS wafer will will be discussed. Experiment results and performance comparision will be discussed.",

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