Compact modeling of phase-change memories

K. Sonoda, A. Sakai, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue

    研究成果: Conference contribution

    抄録

    A compact model for a phase-change memory cell is presented and confirmed by measurement. The model reproduces the non-linear current-voltage behavior of both set and reset states. The temperature-dependent crystallization and amorphization of the phase-change layer are taken into account in order to express resistance changes between set and reset states. The heat of fusion is also taken into account in the calculation of the amorphization.

    本文言語English
    ホスト出版物のタイトル2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
    出版社Springer-Verlag Wien
    ページ137-140
    ページ数4
    ISBN(印刷版)9783211728604
    DOI
    出版ステータスPublished - 2007 1 1
    イベント12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007 - Vienna, Austria
    継続期間: 2007 9 252007 9 27

    出版物シリーズ

    名前2007 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007

    Other

    Other12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007
    国/地域Austria
    CityVienna
    Period07/9/2507/9/27

    ASJC Scopus subject areas

    • 電子工学および電気工学
    • モデリングとシミュレーション

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