@article{2faeea92f0bb47e091506fb71e2999fd,
title = "Combined Raman/HREELS study of ZnSeZnS strained-layer superlattices",
abstract = "ZnSeZnS strained-layer superlattices have been investigated by combining Raman scattering and high-resolution electron energy loss spectroscopy (HREELS). The superlattices were grown on GaAs(001) by MOCVD without a buffer layer. Epitaxial growth of the superlattices was confirmed by the polarization selection rule of Raman scattering. Energy differences between the bulk (ZnS, ZnSe) LO phonons and the superlattice LO phonons indicate that strain is mainly localized in the ZnS layers. In HREELS the loss peak originating from ZnS must be assumed to be appreciably weaker than that from ZnSe. This result does not agree with the theoretical prediction based on the dielectric theory. We conclude that the reduction of the electron scattering intensity results from large strain in the ZnS layers.",
author = "M. Sekoguchi and Y. Uehara and S. Ushioda",
note = "Funding Information: We would like to thank Dr. T, Taguchi of Osaka University for his advice in growing the ZnSe-ZnS SLS, and Professor C. Oshima of WasedaU niversityf or his advicei n the designo f our EELS system.W e wish to acknowledgeim - portant contributions by earlier graduate students,M r. T. Wakamatsua nd Mr. S. Mori, in the constructiono f the EELS systemi n our laboratory. Also we would like to acknowledget he excellentt echnicalsupport provided by the Machine Shop of our Institute. We thank Mr. T. Tsuruoka and R. K. Sakamotof or their contributions in setting up the Raman system.M r. H. Sano helped us obtain the Raman spectra.T his work was supportedi n part by a Grant-in-Aid for Scientific Research from the Japanese Ministry of Education,S cience,a nd Culture.",
year = "1993",
month = mar,
day = "1",
doi = "10.1016/0039-6028(93)91003-8",
language = "English",
volume = "283",
pages = "355--359",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-3",
}