Combinatorial materials exploration and composition tuning for the future gate stack structure

Toyohiro Chikyow, Ken Hasegawa, Tae Tamori, Kenji Ohmori, Naoto Umezawa, Kiyomi Nakajima, Keisaku Yamada, Hideomi Koinuma

研究成果: Conference contribution

抄録

A combinatorial ternary composition spread method, which included continuous ternary and binary compositions, was applied for new materials exploration for the future gate stack structure, Rapid estimation of pertivity are carried out by microwave microscope as well as conventional C-V measurement. Structural analyses are performed systematically by combinatorial X-ray diffraction equipment. Higher dielectric region are observed in (HfO 2)x(Y2O3)y(Al 2O3)z and ternary composition area. Al 2O3 was found to have an ability that prevents HfD 2-Y2O3 alloy from crystallization. We found that HfxYxAlzO ternary oxide is a candidate of stable amorphous high-k gate dielectric material with stable interface on Si substrate. The reason of this stability could be explained by charge neutrality based on the phase diagram which is concluded by thermodynamics.

本文言語English
ホスト出版物のタイトルICSICT-2006
ホスト出版物のサブタイトル2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
出版社IEEE Computer Society
ページ412-417
ページ数6
ISBN(印刷版)1424401615, 9781424401611
DOI
出版ステータスPublished - 2006
外部発表はい
イベントICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
継続期間: 2006 10 232006 10 26

出版物シリーズ

名前ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
国/地域China
CityShanghai
Period06/10/2306/10/26

ASJC Scopus subject areas

  • 電子工学および電気工学

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