Combinatorial laser molecular beam epitaxy (MBE) growth of Mg-Zn-O alloy for band gap engineering

Yuji Matsumoto, Makoto Murakami, Zhengwu Jin, Akira Ohtomo, Mikk Lippmaa, M. Kawasaki, Hideomi Koinuma

研究成果: Article査読

181 被引用数 (Scopus)

抄録

We have developed a new combinatorial synthesis system integrating a combinatorial shadow mask into a laser MBE (molecular beam epitaxy) chamber. This combinatorial Laser MBE system can be used for fabricating a number of crystalline films with different compositions on a substrate under programmed temperature and pressure conditions. The method was applied to alloying and band gap engineering of ZnO by positional substitution of Mg into ZnO thin films. The superiority of the combinatorial methodology to conventional one-by-one synthesis is evident from the high linearity of the c-axis length and band gap dependence on Mg content.

本文言語English
ページ(範囲)L603-L605
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
6 A/B
出版ステータスPublished - 1999 6 15
外部発表はい

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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