Combinatorial exploration of flux material for Bi 4 Ti 3 O 12 single crystal film growth

R. Takahashi, Y. Yonezawa, M. Ohtani, M. Kawasaki, Y. Matsumoto, H. Koinuma

研究成果: Conference article査読

10 被引用数 (Scopus)

抄録

The combinatorial approach to materials synthesis was employed for the quick screening of a flux material for liquid phase-mediated epitaxy of Bi 4 Ti 3 O 12 single crystal film. A series of ternary flux libraries composed of two self-fluxes (Bi 2 O 3 and Bi 4 Ti 3 O 12 ) and an impurity flux (VO x , WO x , CuO x , BiPO x , BaO, MoO x ) were fabricated on the SrTiO 3 (0 0 1) substrates. Then, stoichiometric Bi 4 Ti 3 O 12 was grown on each one of these flux libraries at a temperature presumed to melt the flux. High-throughput characterization with the concurrent X-ray diffraction (XRD) method resulted in the discovery of a novel flux material, CuO, containing Bi 2 O 3 , for Bi 4 Ti 3 O 12 single crystal film.

本文言語English
ページ(範囲)2477-2481
ページ数5
ジャーナルApplied Surface Science
252
7
DOI
出版ステータスPublished - 2006 1 21
外部発表はい
イベントProceedings of the Third Japan-US Workshop on Combinatorial Material Science and Technology CMST-e SI -
継続期間: 2004 12 72004 12 10

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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