Collective tunneling model between two-dimensional electron gas to Si-Nano Dot

Masakazu Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, K. Makihara, M. Ikeda, S. Miyazaki, Y. Shigeta, Tetsuo Endoh

研究成果: Conference contribution

抄録

We study the temperature dependence of electron injection voltage in Si-Nano-Dot (Si-NDs) Floating Gate MOS capacitor by using the collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the temperature dependence by numerical calculation, which emulate the experiment in this system, and we obtained a new insight into the origin of the temperature dependence. We have revealed that the collective tunneling model can reproduce the temperature dependence of electron tunneling.

本文言語English
ホスト出版物のタイトルPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
ページ295-296
ページ数2
DOI
出版ステータスPublished - 2011 12 1
イベント30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
継続期間: 2010 7 252010 7 30

出版物シリーズ

名前AIP Conference Proceedings
1399
ISSN(印刷版)0094-243X
ISSN(電子版)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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