Coercivity change in an FePt thin layer in a Hall device by voltage application

研究成果: Article査読

87 被引用数 (Scopus)

抄録

The coercivity (Hc) of a perpendicularly magnetized FePt layer was modulated by applying the voltage (Vapp) to a Hall device through MgO and Al-O insulating layers. A change in ∼40 Oe in Hc was observed by changing Vapp from -13 to 13 V. From the quantitative analysis of the voltage effect on Hc, the change in the anisotropy energy by voltage application was evaluated to be 18.6 fJ/V m, which was of the same order as the theoretical prediction. The role of the MgO layer for the voltage effect was also discussed.

本文言語English
論文番号212505
ジャーナルApplied Physics Letters
98
21
DOI
出版ステータスPublished - 2011 5 23

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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