CMOS/BiCMOS power amplifier technology trend in Japan

N. Suematsu, S. Shinjo

研究成果: Paper

4 引用 (Scopus)

抜粋

Aiming for 2-5GHz band transceiver system on a chip, the integration of RF section has been developed by using conventional CMOS/BiCMOS (SiGeCMOS) process. The attempts to integrate power amplifiers (PA's) have been successful for low transmit power system such as Buletooth, but these attempts are very limited due to the poor power handling capability of FET's in CMOS and the distortion characteristics of BJT's(HBT's) in BiCMOS. From the point of view of a circuit designer, this paper reviews the recent research activities of CMOS/BiCMOS PA's in Japan, and also describes the details of (1) the feasibility study of PA's using conventional CMOS process, and (2) the circuitry trials of distortion reduction for BJT(HBT) PA's.

元の言語English
ページ107-110
ページ数4
出版物ステータスPublished - 2001 1 1
外部発表Yes
イベント23rd Annual GaAs IC Symposium 2001 - Baltimore, MD, United States
継続期間: 2001 10 212001 10 24

Other

Other23rd Annual GaAs IC Symposium 2001
United States
Baltimore, MD
期間01/10/2101/10/24

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Suematsu, N., & Shinjo, S. (2001). CMOS/BiCMOS power amplifier technology trend in Japan. 107-110. 論文発表場所 23rd Annual GaAs IC Symposium 2001, Baltimore, MD, United States.