Cluster-preforming-deposited amorphous WSin (n = 12) insertion film of low SBH and high diffusion barrier for direct Cu contact

Naoya Okada, Noriyuki Uchida, Sinichi Ogawa, Kazuhiko Endo, Toshihiko Kanayama

研究成果: Conference contribution

抄録

The insertion of an amorphous WSin (n = 12) film composed of W-atom-encapsulated Sin cage clusters is demonstrated to reduce the SBH to 0.32 eV at W/n-Si and to 0.51 eV at W/Ge/p-Si junctions, while significantly extending the estimated TDDB lifetime to > 10 years at 100 °C under 5 MV/cm stress for Cu MOS capacitors. This film was formed with an excellent contact hole coverage by using WF6 and SiH4 gas sources in a hot-wall thermal reactor. These film properties enable the direct Cu contact at S/D in CMOS.

本文言語English
ホスト出版物のタイトル2017 IEEE International Electron Devices Meeting, IEDM 2017
出版社Institute of Electrical and Electronics Engineers Inc.
ページ22.5.1-22.5.4
ISBN(電子版)9781538635599
DOI
出版ステータスPublished - 2018 1月 23
外部発表はい
イベント63rd IEEE International Electron Devices Meeting, IEDM 2017 - San Francisco, United States
継続期間: 2017 12月 22017 12月 6

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other63rd IEEE International Electron Devices Meeting, IEDM 2017
国/地域United States
CitySan Francisco
Period17/12/217/12/6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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