Cleaning-free deposition of highly crystallized Si films on plastic film substrates using pulsed-plasma CVD under near-atmospheric pressure

M. Matsumoto, S. Ito, Y. Inayoshi, S. Murashige, H. Fukidome, M. Suemitsu, S. Nakajima, T. Uehara, Y. Toyoshima

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

By employing a pulsed-discharge, near-atmospheric-pressure plasma-enhanced chemical vapor deposition, equally qualified pair of poly-Si films are grown on polyethylene terephthalate (PET) substrates placed at both the grounded and the powered electrodes. This finding leads to a roll-to-roll-type deposition system of cleaning-free operation for film growth.

本文言語English
ホスト出版物のタイトルECS Transactions - Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing 11
出版社Electrochemical Society Inc.
ページ345-350
ページ数6
5
ISBN(電子版)9781607680925
ISBN(印刷版)9781566777421
DOI
出版ステータスPublished - 2009
外部発表はい
イベント11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting - Vienna, Austria
継続期間: 2009 10 42009 10 9

出版物シリーズ

名前ECS Transactions
番号5
25
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other11th International Symposium on Semiconductor Cleaning and Surface Conditioning Technology in Semiconductor Device Manufacturing - 216th ECS Meeting
国/地域Austria
CityVienna
Period09/10/409/10/9

ASJC Scopus subject areas

  • 工学(全般)

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