Chip level simulation of substrate noise coupling and interference in RF ICs with CMOS digital noise emulator

Naoya Azuma, Shunsuke Shimazaki, Noriyuki Miura, Makoto Nagata, Tomomitsu Kitamura, Satoru Takahashi, Motoki Murakami, Kazuaki Hori, Atsushi Nakamura, Kenta Tsukamoto, Mizuki Iwanami, Eiji Hankui, Sho Muroga, Yasushi Endo, Satoshi Tanaka, Masahiro Yamaguchi

研究成果: Article査読

抄録

Substrate noise coupling in RF receiver front-end circuitry for LTE wireless communication was examined by full-chip level simulation and on-chip measurements, with a demonstrator built in a 65 nm CMOS technology. A CMOS digital noise emulator injects high-order harmonic noises in a silicon substrate and induces in-band spurious tones in an RF receiver on the same chip through substrate noise interference. A complete simulation flow of full-chip level substrate noise coupling uses a decoupled modeling approach, where substrate noise waveforms drawn with a unified package-chip model of noise source circuits are given to mixedlevel simulation of RF chains as noise sensitive circuits. The distribution of substrate noise in a chip and the attenuation with distance are simulated and compared with the measurements. The interference of substrate noise at the 17th harmonics of 124.8MHz-the operating frequency of the CMOS noise emulator creates spurious tones in the communication bandwidth at 2.1 GHz.

本文言語English
ページ(範囲)546-556
ページ数11
ジャーナルIEICE Transactions on Electronics
E97-C
6
DOI
出版ステータスPublished - 2014 6月

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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