Chemical trend of Fermi-level shift in transition metal-doped TiO 2 films

Yuji Matsumoto, Masao Katayama, Takatoshi Abe, Takeo Ohsawa, Isao Ohkubo, Hiroshi Kumigashira, Masaharu Oshima, Hideomi Koinuma

研究成果: Article査読

11 被引用数 (Scopus)

抄録

The effect of doping a wide range of transition metals (TMs) including V, Cr, Mn, Fe, Co, and Ni into rutile TiO2 films grown on Nb-doped TiO2(110) single-crystal substrates was investigated by photoemission spectroscopy and X-ray absorption spectroscopy. For all TM-doped TiO 2 films, the Ti 2p and O 1s core levels were similarly shifted to lower binding energies with increasing film thickness and the shifts were similarly saturated at a film thickness of about 15 nm. These peak shifts could be interpreted in terms of the Fermi level shift, indicating that dopants trap excess electrons from the Ti 3d band like acceptors. The present systematic data revealed that the magnitude of the saturated Fermi level shift correlates well with the effective charge transfer energy.

本文言語English
ページ(範囲)993-996
ページ数4
ジャーナルJournal of the Ceramic Society of Japan
118
1383
DOI
出版ステータスPublished - 2010 11
外部発表はい

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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