Ultrathin SiON films formed by thermal nitridation of SiO2 films were investigated. High-resolution angle-resolved photoelectron spectroscopy was used to investigate the interfacial chemistry of the films. The second-nearest-neighbor effect in the chemical shift was also taken into account. The valence-band offsets of the films were determined to be 4.4 eV.
|ジャーナル||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版ステータス||Published - 2004 1|
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