Chemical states and band offsets of NH3-treated Si oxynitride films studied by high-resolution photoelectron spectroscopy

M. Oshima, S. Toyoda, J. Okabayashi, H. Kumigashira, K. Ono, M. Niwa, K. Usuda, N. Hirashita

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Ultrathin SiON films formed by thermal nitridation of SiO2 films were investigated. High-resolution angle-resolved photoelectron spectroscopy was used to investigate the interfacial chemistry of the films. The second-nearest-neighbor effect in the chemical shift was also taken into account. The valence-band offsets of the films were determined to be 4.4 eV.

本文言語English
ページ(範囲)176-180
ページ数5
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
22
1
DOI
出版ステータスPublished - 2004 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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