Chemical-state-resolved in-depth profiles of gate-stack structures on Si studied by angular-dependent photoemission spectroscopy

S. Toyoda, J. Okabayashi, M. Oshima, G. L. Liu, Z. Liu, K. Ikeda, K. Usuda

研究成果: Article査読

12 被引用数 (Scopus)

抄録

We have investigated chemical-state-resolved in-depth profiles of SiO 2/SiN stack films using angular-dependent photoemission spectroscopy and maximum-entropy method (MEM). MEM enables to reproduce the gate-stack structure from angular-dependence of core-level spectra, and it is utilized to determine atomic concentration of the interfacial layer. In-depth profile of the SiO2/SiN stack film reveals that the SiO2 layer is distributed in the surface region and that the SiN layer is partly oxidized, which is well related to nitrogen bonding states analyzed by angular-dependence of N1 s core-level spectra.

本文言語English
ページ(範囲)1619-1622
ページ数4
ジャーナルSurface and Interface Analysis
40
13
DOI
出版ステータスPublished - 2008 12
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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