Chemical-state resolved depth profile and band discontinuity in TiN/HfSiON gate stack structure with AlOx cap layer

S. Toyoda, H. Kamada, H. Kumigashira, M. Oshima

研究成果: Article査読

1 被引用数 (Scopus)

抄録

We have investigated chemical-state-resolved depth profiles and band discontinuity for TiN/HfSiON gate stack structure with an AlOx cap layer on a Si substrate using backside angle-resolved photoemission spectroscopy. Depth profiles show that Al atoms diffuse through the high-k layer and are accumulated at the high-k/SiO2 interface during the thermal annealing process. The decrease in relative chemical shift of Si 2p to Hf 4f core-level spectra by inserting the AlOx cap layer can be explained by the lowering of the valence-band discontinuity, which is induced by the modification of the interface dipole of the high-k/SiO2 system.

本文言語English
論文番号104107
ジャーナルJournal of Applied Physics
110
10
DOI
出版ステータスPublished - 2011 11 15
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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