Selective laser annealing system using KrF excimer laser was applied to amorphous IGZO films. IGZO film was crystallized for the laser-irradiated area (60µm square), where the chemical stability against acid solutions was improved. The stability against the negative bias illumination stress for the laser-treated TFT was improved. Furthermore, TFT could be fabricated without the photo lithography for the island patterning.
|ジャーナル||Digest of Technical Papers - SID International Symposium|
|出版ステータス||Published - 2017 1 1|
|イベント||SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States|
継続期間: 2017 5 21 → 2017 5 26
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