The plasma etching of SiO2 by CF2 radicals was investigated using a newly developed etching process simulator based on tight-binding quantum chemical molecular dynamics (TB-QCMD). CF2 radicals were continuously irradiated on the SiO2(001) surface and then the dissociations of the C-F and Si-O bonds were observed. We also observed the generation of CO and CO2 molecules and Si-F bonds, which is in good agreement with previous experiments. The formation of etching holes was realized after the continuous irradiation of CF2 radicals. Furthermore, the effect of radical velocity on etching efficiency was also examined. The ratio of penetration depth to the width of irradiated atoms was examined for the evaluation of etching efficiency. The ratio increases as the irradiation velocity of CF2 radicals increases. Our TB-QCMD etching process simulator is capable of predicting etching rate and aspect ratio depending on the velocity of irradiated radicals.
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