TY - JOUR
T1 - Chemical-pressure-induced point defects enable low thermal conductivity for mg2sn and mg2si single crystals
AU - Saito, Wataru
AU - Hayashi, Kei
AU - Huang, Zhicheng
AU - Sugimoto, Kazuya
AU - Ohoyama, Kenji
AU - Happo, Naohisa
AU - Harada, Masahide
AU - Oikawa, Kenichi
AU - Inamura, Yasuhiro
AU - Hayashi, Kouichi
AU - Miyazaki, Takamichi
AU - Miyazaki, Yuzuru
N1 - Funding Information:
This work was partly supported by the Grant-in-Aid for JSPS Fellows (no. 20J10512), Grant-in-Aid for Scientific Research (B) (no. 17H03398), Grant-in-Aid for Scientific Research on Innovative Areas (no. 17H05207), and Grant-in-Aid for Transformative Research Areas (nos. 20H05878 and 20H05881) from the Ministry of Education, Culture, Sports, Science, and Technology (MEXT) of Japan. The white neutron holography experiments were partly supported by Grant-in-Aid for Scientific Research (A) (no. 19H00655) and Grant-in-Aid for Scientific Research on Innovative Areas (nos. 26105001, 26105006, and 19H05045) from MEXT of Japan under the user program of the Materials and Life Science Experimental Facility of the J-PARC (Proposal Nos. 2018I0010, 2018B0049, and 2019A0082). This work was partly based on collaborative research between Sumitomo Metal Mining Co., Ltd. and Tohoku University, which is part of the Vision Co-creation Partnership.
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/5/24
Y1 - 2021/5/24
N2 - The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg2Sn and Mg2Si are promising TE materials because of their superior TE performance. In this study, for future improvement of the TE performance, point defect engineering was applied to the Mg2Sn and Mg2Si single crystals (SCs) via boron (B) doping. Their crystal structures were analyzed via white neutron holography and SC X-ray diffraction. Moreover, nanostructures and TE properties of the B-doped Mg2Sn and Mg2Si SCs were investigated. The B-doping increased the chemical pressure on the Mg2Sn and Mg2Si SCs, leading to inducing vacancy defects as a point defect. No apparent change was observed in electronic transport, but thermal transport was significantly prevented. This study demonstrates that the vacancy defects can be controlled by the chemical pressure and can aid in achieving high TE performance for the Mg2Sn and Mg2Si SCs.
AB - The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg2Sn and Mg2Si are promising TE materials because of their superior TE performance. In this study, for future improvement of the TE performance, point defect engineering was applied to the Mg2Sn and Mg2Si single crystals (SCs) via boron (B) doping. Their crystal structures were analyzed via white neutron holography and SC X-ray diffraction. Moreover, nanostructures and TE properties of the B-doped Mg2Sn and Mg2Si SCs were investigated. The B-doping increased the chemical pressure on the Mg2Sn and Mg2Si SCs, leading to inducing vacancy defects as a point defect. No apparent change was observed in electronic transport, but thermal transport was significantly prevented. This study demonstrates that the vacancy defects can be controlled by the chemical pressure and can aid in achieving high TE performance for the Mg2Sn and Mg2Si SCs.
KW - Boron-doping
KW - Chemical pressure
KW - Mgsn and mgsi single crystals
KW - Point defects
KW - Thermoelectric properties
UR - http://www.scopus.com/inward/record.url?scp=85106590671&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85106590671&partnerID=8YFLogxK
U2 - 10.1021/acsaem.1c00670
DO - 10.1021/acsaem.1c00670
M3 - Article
AN - SCOPUS:85106590671
SN - 2574-0962
VL - 4
SP - 5123
EP - 5131
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 5
ER -