Chemical diffusion: Another factor affecting the magnetoresistance ratio in Ta/CoFeB/MgO/CoFeB/Ta magnetic tunnel junction

Y. Yang, W. X. Wang, Y. Yao, H. F. Liu, H. Naganuma, T. S. Sakul, X. F. Han, R. C. Yu

研究成果: Article査読

28 被引用数 (Scopus)

抄録

This letter investigates the microstructure and mean inner potential (MIP) profile of Ta/CoFeB/MgO/CoFeB/Ta magnetic tunnel junctions (MTJs) by high resolution transmission electron microscopy (HRTEM) and electron holography, respectively. The inconspicuous crystallization of MgO barrier is confirmed by HRTEM in the post-annealed sample at 250 °C. An obvious MIP difference is displayed in the Ta layers between the top and bottom of the MTJ, and elemental content difference of them is confirmed by energy dispersive spectroscopy. These results imply that the chemical diffusion can also give rise to a lower tunnel magnetoresistance ratio besides the inconspicuous crystallization of MgO barrier.

本文言語English
論文番号012406
ジャーナルApplied Physics Letters
101
1
DOI
出版ステータスPublished - 2012 7 2

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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