Chemical analysis of Hf-silicide clusters studied by photoemission spectroscopy

S. Toyoda, J. Okabayashi, H. Kumigashira, M. Oshima, K. Ono, M. Niwa, K. Usuda, G. L. Liu

研究成果: Article査読

9 被引用数 (Scopus)

抄録

High-resolution core-level photoemission spectroscopy has been performed on the nanoscaled Hf-silicide clusters, which were formed by the annealing at 1000°C in ultra-high vacuum of HfO2 films on Si(0 0 1) substrate utilized as ultra-large-scaled-integrated (ULSI) transistors. Angular dependence in Si 2p and Hf 4f core-level spectra revealed the chemical states in the metallic clusters. We compared two HfO2 samples with and without Hf-metal predeposition on Si substrate before the HfO2 deposition, which results in the different cluster size due to the different Hf concentration.

本文言語English
ページ(範囲)487-490
ページ数4
ジャーナルJournal of Electron Spectroscopy and Related Phenomena
144-147
DOI
出版ステータスPublished - 2005 6
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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