High-resolution core-level photoemission spectroscopy has been performed on the nanoscaled Hf-silicide clusters, which were formed by the annealing at 1000°C in ultra-high vacuum of HfO2 films on Si(0 0 1) substrate utilized as ultra-large-scaled-integrated (ULSI) transistors. Angular dependence in Si 2p and Hf 4f core-level spectra revealed the chemical states in the metallic clusters. We compared two HfO2 samples with and without Hf-metal predeposition on Si substrate before the HfO2 deposition, which results in the different cluster size due to the different Hf concentration.
|ジャーナル||Journal of Electron Spectroscopy and Related Phenomena|
|出版ステータス||Published - 2005 6|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Physical and Theoretical Chemistry