Charging-damage-free and precise dielectric etching in pulsed C2F4/CF3I plasma

H. Ohtake; S. Samukawa

doi:10.1116/1.1479737

Charging-damage-free and precise dielectric etching in pulsed C₂F₄/CF₃I plasma

H. Ohtake, S. Samukawa

流体科学研究所・未到エネルギー研究センター

研究成果: Conference article › 査読

19 被引用数 (Scopus)

抄録

The charging-damage-free φ0.05 μm SiO₂ contact etching in a pulsed C₂F₄/CF₃I plasma was performed. The SiO₂ etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO₂ etching.

本文言語	English
ページ（範囲）	1026-1030
ページ数	5
ジャーナル	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
巻	20
号	3
DOI	https://doi.org/10.1116/1.1479737
出版ステータス	Published - 2002 5月
イベント	20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States 継続期間: 2001 10月 1 → 2001 10月 3

ASJC Scopus subject areas

凝縮系物理学
電子工学および電気工学

文献へのアクセス

10.1116/1.1479737

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引用スタイル

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abstract = "The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.",

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