The charging-damage-free φ0.05 μm SiO2 contact etching in a pulsed C2F4/CF3I plasma was performed. The SiO2 etching rate in the plasma remained constant even during the pulse-OFF time of 20μs. The charging damage in the pulsed plasma decreased drastically due to the presence of negative ions. Results suggested that the negative ions generated in the plasma were every effective for charge-free and precise SiO2 etching.
|ジャーナル||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|出版ステータス||Published - 2002 5月|
|イベント||20th North American Conference on Molecular Beam Epitaxy - Providence, RI, United States|
継続期間: 2001 10月 1 → 2001 10月 3
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