Charged defects reduction in gate insulator with multivalent materials

M. Kouda, N. Umezawa, K. Kakushima, P. Ahmet, K. Shiraishi, T. Chikyow, K. Yamada, H. Iwai

研究成果: Conference contribution

19 被引用数 (Scopus)

抄録

Charged defects in the gate insulating oxide cause various degradations in operating MOSFET such as flat-band voltage shifts or threshold voltage instabilities. Excess or deficient oxygen atoms in the oxide layer are relevant to those fixed charges, and thus oxygen concentration must be carefully controlled in the fabrication process. Given the fact that the optimum ambient atmosphere strongly depends on the size or structure of the gate stack, adjusting oxygen partial pressure is not realistic. Our computational and thermodynamic investigations suggest that multivalent oxides such as Ce-oxide act as an oxygen reservoir when deposited on a high-k oxide, and play an important role in retaining the oxygen chemical potential unchanged throughout the oxide film independent of the process conditions. Moreover, we demonstrate that finding the best combination of the multivalent oxide with a high-k oxide can minimize the number of charged defects. This theoretical model has been justified by our experimental observations for Ce-oxide/La2O 3 gate oxide in comparison with La2O3.

本文言語English
ホスト出版物のタイトル2009 Symposium on VLSI Technology, VLSIT 2009
ページ200-201
ページ数2
出版ステータスPublished - 2009
イベント2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
継続期間: 2009 6 162009 6 18

出版物シリーズ

名前Digest of Technical Papers - Symposium on VLSI Technology
ISSN(印刷版)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
国/地域Japan
CityKyoto
Period09/6/1609/6/18

ASJC Scopus subject areas

  • 電子工学および電気工学

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