Charge trapping by oxygen-related defects in HfO₂-based High-k gate dielectrics

Engineering

• Gate Dielectric 100%
• Dielectric Film 100%
• Related Defect 100%
• Capacitance 50%
• Field-Effect Transistor 50%
• Gate Voltage 50%
• Constant Voltage 50%
• Substrates 50%

Physics

• Oxygen 100%
• Capacitance 50%
• Holes (Electron Deficiencies) 50%
• Substrates 50%
• Time Dependence 50%
• Injection 50%

Material Science

• Dielectric Films 100%
• Charge Trapping 50%