Charge trapping by oxygen-related defects in HfO2-based High-k gate dielectrics

K. Yamabe, M. Goto, K. Higuchi, A. Uedono, K. Shiraishi, S. Miyazaki, K. Torii, M. Boero, T. Chikyow, S. Yamasaki, H. Kitajimai, K. Yamada, T. Arikado

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The time-dependences of leakage currents due to electrons and holes flowing through HfO2-based high-k gate dielectric films under constant voltage stresses are investigated by a carrier separation method using field-effect transistor structures. In the case of balanced injection, some of the injected electrons were trapped near the gate, while some of the injected holes were trapped near the substrate. As a result, both leakage currents reduced. Capacitance change during the relaxation after the removal of the gate voltage stress supported the leakage current change. The relationship between the electron-/hole-trapping centers and oxygen-related defects in high-k dielectric films is discussed. 2005 IEEE.

本文言語English
ホスト出版物のタイトル2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
ページ648-649
ページ数2
出版ステータスPublished - 2005 12 15
イベント2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual - San Jose, CA, United States
継続期間: 2005 4 172005 4 21

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷版)1541-7026

Conference

Conference2005 IEEE International Reliability Physics Symposium Proceedings, 43rd Annual
国/地域United States
CitySan Jose, CA
Period05/4/1705/4/21

ASJC Scopus subject areas

  • 工学(全般)

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