Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion

Miki Naganawa, Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Kentarou Sawano, Yasuhiro Shiraki, Eugene E. Haller

研究成果: Article査読

55 被引用数 (Scopus)

抄録

Diffusion of germanium (Ge) and arsenic (As) has been investigated simultaneously using As-implanted Ge isotope superlattices. No transient enhanced diffusion of As that could have arisen by the implantation damage is observed. A quadratic dependence of the Ge self-diffusion on the carrier concentration due to the Fermi level effect is observed. A precise reproduction of the Ge and As diffusion profiles by a numerical simulator lets us conclude that doubly negatively charged vacancies are the dominant point defects responsible for more than 95% of the self-diffusion in intrinsic Ge and this fraction increases even further in n -type Ge.

本文言語English
論文番号191905
ジャーナルApplied Physics Letters
93
19
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル