Charge-discharge dynamics of disorder induced gap state continuum at compound semiconductor-insulator interfaces

Li He, Hideki Hasegawa, Ji kui Luo, Hideo Ohno

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Based on the recently proposed disorder-induced gap state (DIGS) model for interface states, the charge-discharge dynamics of interface state continuum at insulator-semiconductor (I-S) interfaces are theoretically analyzed and compared with the experiments on InP and InGaAs MIS structures. The concept occupation boundary used in the analysis clarifies the physics involved and simplifies the simulation of complex processes. By assuming a particular type of DIGS distribution in energy and in space, the observed complex hysteresis behavior of dispersion of MIS capacitance in MIS C-V curves as well as the current drift behavior of MISFET's are completely reproduced on computer, offering a unified understanding of a wide variety of phenomena associated with I-S interfaces.

本文言語English
ページ(範囲)1030-1036
ページ数7
ジャーナルApplied Surface Science
33-34
C
DOI
出版ステータスPublished - 1988 9
外部発表はい

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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