The radical reaction based semiconductor manufacturing has been applied to silicon device process. Such as SiO2 and Si3N4 can be formed at low temperatures of under 500-600°C. In this study, we applied radical reaction based semiconductor manufacturing to compound semiconductor of ZnO. The characteristics of ZnO films grown by a newly developed plasma enhanced metal organic chemical vapor deposition (MOCVD) employing microwave excited high-density plasma are good. The film formed on a-plane sapphire is epitaxially oriented in c-axis direction, and the composition is similar to ZnO substrate grown by hydrothermal method. The mobility of grown film at around 400°C is 23 cm2/(V·s), and it is increased to 46 cm2/(V'S) by 700°C annealing. The carbon concentration in the films can be reduced by the selection of a zinc precursor and the optimization of process conditions. The active species of plasma are effective for the crystallization of films.
ASJC Scopus subject areas
- Physics and Astronomy(all)