Characterization of zinc oxide films grown by a newly developed plasma enhanced metal organic chemical vapor deposition employing microwave excited high density plasma

Hirokazu Asahara, Atsutoshi Inokuchi, Kohei Watanuki, Masaki Hirayama, Akinobu Teramoto, Tadahiro Ohmi

研究成果: Article

7 引用 (Scopus)

抜粋

The radical reaction based semiconductor manufacturing has been applied to silicon device process. Such as SiO2 and Si3N4 can be formed at low temperatures of under 500-600°C. In this study, we applied radical reaction based semiconductor manufacturing to compound semiconductor of ZnO. The characteristics of ZnO films grown by a newly developed plasma enhanced metal organic chemical vapor deposition (MOCVD) employing microwave excited high-density plasma are good. The film formed on a-plane sapphire is epitaxially oriented in c-axis direction, and the composition is similar to ZnO substrate grown by hydrothermal method. The mobility of grown film at around 400°C is 23 cm2/(V·s), and it is increased to 46 cm2/(V'S) by 700°C annealing. The carbon concentration in the films can be reduced by the selection of a zinc precursor and the optimization of process conditions. The active species of plasma are effective for the crystallization of films.

元の言語English
ページ(範囲)2994-2998
ページ数5
ジャーナルJapanese journal of applied physics
47
発行部数4 PART 2
DOI
出版物ステータスPublished - 2008 4 25

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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