Characterization of wave propagation on traveling-wave field effect transistors

Koichi Narahara, Taiichi Otsuji

研究成果: Article査読

9 被引用数 (Scopus)

抄録

The wave propagation characteristics along the electrodes of traveling-wave field effect transistors (TW-FETs) are described. Due to the fine gate structure of present high-speed FETs, the performance is greatly influenced by the electromagnetic coupling between the gate line and the drain line. No previous study has introduced a design method that can resolve this issue. The main purpose of this article is to clarify the characteristics of TW-FETs, and then, propose new design methods that cope with the coupling. The conditions under which TW-FETs yield ultrafast operation even with coupling are derived and then the results and implications of experimental investigations that measured the impulse response of a TW-FET using electro-optic sampling techniques are discussed.

本文言語English
ページ(範囲)6328-6339
ページ数12
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
37
12
DOI
出版ステータスPublished - 1998 12月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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