Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3 MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.