Characterization of Si p-i-n diode for scanning transmission ion microanalysis of biological samples

G. Devès, S. Matsuyama, Y. Barbotteau, K. Ishii, R. Ortega

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The performance of a silicon p-i-n diode (Hamamatsu S1223-01) for the detection of charged particles was investigated and compared with the response of a standard passivated implanted planar silicon (PIPS) detector. The photodiode was characterized by ion beam induced charge collection with a micrometer spatial resolution using proton and alpha particle beams in the 1-3 MeV energy range. Results indicate that homogeneity, energy resolution, and reproducibility of detection of charged particles enable the use of the low cost silicon p-i-n device as a replacement of conventional PIPS detector during scanning transmission ion microanalysis experiments. The Si p-i-n diode detection setup was successfully applied to scanning transmission ion microscopy determination of subcellular compartments on human cancer cultured cells.

本文言語English
論文番号056102
ジャーナルReview of Scientific Instruments
77
5
DOI
出版ステータスPublished - 2006 5月

ASJC Scopus subject areas

  • 器械工学

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