Characterization of P+ implanted SiO2 powders

Kenji Kajiyama, Yasuo Suzuki, Tadashi Kokubo, Masakazu Kawashita, Fumiaki Miyaji

研究成果: Paper査読

4 被引用数 (Scopus)

抄録

31P ions were implanted into high-purity SiO2 sphere powders of 20 to approximately 30 μmφ at 50 keV energy with 1.5×1017/cm2 dose utilizing a modified medium-current implanter and, for reference, into SiO2 plate at 200 keV with 1.0×1018/cm2 utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5 μmφ Cs+ primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and μ-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.

本文言語English
ページ816-819
ページ数4
出版ステータスPublished - 1996 12 1
イベントProceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA
継続期間: 1996 6 161996 6 21

Other

OtherProceedings of the 1996 11th International Conference on Ion Implantation Technology
CityAustin, TX, USA
Period96/6/1696/6/21

ASJC Scopus subject areas

  • Engineering(all)

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