31P ions were implanted into high-purity SiO2 sphere powders of 20 to approximately 30 μmφ at 50 keV energy with 1.5×1017/cm2 dose utilizing a modified medium-current implanter and, for reference, into SiO2 plate at 200 keV with 1.0×1018/cm2 utilizing a conventional medium-current implanter. P doping profile was measured by 3D-SIMS with 0.5 μmφ Cs+ primary beam. Buried high P-concentration region was revealed. Implanted structure was observed by XTEM, EPMA and μ-RHEED: tens-nm-diameter sphere-like balls of phospho-silicate glass were distributed around the projected range. The top surface was almost unchanged from the substrate and was so thick as to prevent P elusion into hot water.
|出版ステータス||Published - 1996 12 1|
|イベント||Proceedings of the 1996 11th International Conference on Ion Implantation Technology - Austin, TX, USA|
継続期間: 1996 6 16 → 1996 6 21
|Other||Proceedings of the 1996 11th International Conference on Ion Implantation Technology|
|City||Austin, TX, USA|
|Period||96/6/16 → 96/6/21|
ASJC Scopus subject areas