Characterization of millisecond-anneal-induced defects in SiON and SiON/Si interface by gate current fluctuation measurement

Tsunehisa Sakoda, Keita Nishigaya, Tomohiro Kubo, Mitsuaki Hori, Hiroshi Minakata, Yuko Kobayashi, Hiroko Mori, Katsuji Ono, Katsuto Tanahashi, Naoyoshi Tamura, Toshifumi Mori, Yoshiharu Tosaka, Hideya Matsuyama, Chioko Kaneta, Koichi Hashimoto, Masataka Kase, Yasuo Nara

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

In this paper, we have investigated bulk trap and interface trap density (Dit) caused by millisecond annealing (MSA) using gate current fluctuation (GCF) and charge pumping measurements. We show that the high energy flash lamp annealing (FLA) creates the GCF with a long duration time and it is critical issue to get a stable SRAM operation. FLA creates interface traps localized at the gate edge of MOSFET.

本文言語English
ホスト出版物のタイトル2010 IEEE International Reliability Physics Symposium, IRPS 2010
ページ379-384
ページ数6
DOI
出版ステータスPublished - 2010
外部発表はい
イベント2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
継続期間: 2010 5月 22010 5月 6

出版物シリーズ

名前IEEE International Reliability Physics Symposium Proceedings
ISSN(印刷版)1541-7026

Other

Other2010 IEEE International Reliability Physics Symposium, IRPS 2010
国/地域Canada
CityGarden Grove, CA
Period10/5/210/5/6

ASJC Scopus subject areas

  • 工学(全般)

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