Characterization of MgZnO films grown by plasma enhanced metal-organic chemical vapor deposition

Hirokazu Asahara, Daiju Takamizu, Atsutoshi Inokuchi, Masaki Hirayama, Akinobu Teramoto, Shin Saito, Migaku Takahashi, Tadahiro Ohmi

研究成果: Article査読

19 被引用数 (Scopus)

抄録

MgZnO (magnesium-zinc-oxide) films were grown on (11-20) sapphire substrates and Zn-polar ZnO substrates by plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) employing microwave-excited plasma. Structural, electrical and optical properties were investigated by X-ray diffraction, atomic force microscope, Hall, transmittance and photoluminescence measurement. The c-axis lattice constant decreases proportionally to an increase in the Mg content of MgxZn1 - xO films. Therefore, this indicates that Mg atoms can be substituted in the Zn sites. Mg contents in films on ZnO substrates increase up to 0.11. In addition, Ga doped ZnO films were grown on (11-20) sapphire substrates. The resistivity of the films on (11-20) sapphire is controlled between 1.2 × 10- 3 Ω cm to 1 Ω cm by changing the process conditions. The overall results indicate the promising potential of this PE-MOCVD method for related (Zn, Mg)O films formation because of the reactivity of the radicals, such as oxygen radicals (O*).

本文言語English
ページ(範囲)2953-2956
ページ数4
ジャーナルThin Solid Films
518
11
DOI
出版ステータスPublished - 2010 3月 31

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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